Transistor: N+N-MOSFET; unipolar; 20V; 20A; 0.0082ohm; 10.8W; ESD diode; -55+150 deg.C; SMD; DFN2X3-6

PMEB2516Q

Manufacturer code: PMEB2516Q

Transistor: N+N-MOSFET; unipolar; 20V; 20A; 0.0082ohm; 10.8W; ESD diode; -55+150 deg.C; SMD; DFN2X3-6

Information
Manufacturer
POTENS-SEMI
Product code
PMEB2516Q
Manufacturer product code
PMEB2516Q
Package
rolka
Quantity per package
3000
Net weight
Customs number
8541290000
Technical data
Polarization
unipolar
Resistance
8.2mOhm
Transistor type
2xN-MOSFET
Case
DFN2X3-8
Mounting
SMD
DS voltage
20V-20V
Drain current
-2.5A
Manufacturer
POTENS SEMI
Working Temperature
-55+150 st.C
Type
N+P Channelunipolar
Power dissipated
10.8W
Package: rolka
Quantity per package: 3000
Contact consultant
test
Product manager Paweł Kasowicz
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