SRAM Memory; 512kb; 64kx8bit; 20MHz; serial SPI; 25ns; 2.5V-5.5V; -40+85 deg.C; SMD; SO8

IC; A/D Converter; CH:2; 16bit; 2.7-3.3/4.75-5.25V; AFE; -40+85 deg.C; SMD; SO16

IC ;A/D Converter; Ch:3; 24-Bit; 2.75-5.25V; -40+105 deg.C; SMD; TSSOP-16

Integrated Circuit ;A/D Converter; CH:2; 125KSPS; 12bit; ±2LSB; 2.5MHz; 2.75-5.25V; 2.75-5.25V; -40+125 deg.C; SMD; SO8

Integrated Circuit Converter A/D; I2C; 3-wire; CH:1; 12bit; 2.7-5.25V; 2.7-5.25V; -40+125 deg.C; SMD; SOT23-6

Integrated Circuit Converter A/D; I2C; CH:2; 16bit; 860sps; 2-5.5V; -40+125 deg.C; SMD; VSSOP10

Integrated Circuit Converter A/D; CH:1; 24bit; 3-5.3V; 3-5.3V; -40+85 deg.C; SMD; SO16

Integrated Circuit Converter A/D; I2C; 2-wire; CH:1; 10bit; ±1LSB; 100/400kHz; 2.7-5.5V; 2.7-5.5V; -40+125 deg.C; SMD; SOT23

Integrated Circuit A/D Converter; CH:2; 100ksps; ±1LSB; 2.7-5.5V; 550µA; -40+85 deg.C; SMD; MSOP8

Integrated Circuit: A/D Converter; CH:4; 4sps; 18bit; 2.7-5.5V; 2.7-5.5V; -40+125 deg.C; SMD; SOT14; AEC-Q100

Integrated Circuit; D/A Converter ; CH:8; +/- 1.5LSB; 1.8-5.5V; 1.8-5.5V; -40+120 deg.C; SMD; TSSOP20

Integrated Circuit; A/D Converter ; CH:1; 12bit; ±12LSB; 2.7-5.5V; 2.7-5.5V; -40+125 deg.C; SMD; SO8; AEC-Q100