Transistor; IGBT; 600V; 100A; 1041W; POWER MOS 7, PT; -55+150 deg.C; THT; T-Max

Transistor; IGBT; 1200V; 85A; 962W; NPT Ultra Fast IGBT; -55+150 deg.C; THT; TO247-3

Transistor; IGBT; 1200V; 85A; 962W; NPT, POWER MOS 8; -55+150 deg.C; THT; TO264

Transistor; IGBT; 650V; 100A; 892W; NPT, POWER MOS 8; -55+150 deg.C; THT; T-Max

Integrated Circuit RF Switch SPDT unipolar; double throw; 20MHz; 2-5V; -40+85 deg.C; SMD; SC88

SDRAM DRAM Memory; 256Mb; 16Mx16bit; 143MHz; parallel 16bit; 3.0V-3.6V; -40+85 deg.C; SMD; TSOP54

SDRAM DRAM Memory; 256Mb; 16Mx16bit; 143MHz; parallel 16bit; 3V-3.6V; 0+70 deg.C; SMD; TSOP54

SDRAM DRAM Memory; 8Gb; 512Mx16bit; 800MHz; parallel 16bit; 1.35-1.45V; -40+95 deg.C; SMD; FBGA96-ball

SDRAM Memory; 128Mb; 8Mx16bit; 166MHz; parallel 16bit; 3V-3.6V; -40+85 deg.C; SMD; TSOP54

SDRAM Memory; 128Mb; 8Mx16bit; 166MHz; parallel 16bit; 5ns; 3V-3.6V; -40+85 deg.C; SMD; TSOP54

EEPROM Memory; 2kb; 256kx8bit; serial I2C; 1.7V-5.5V; -40+85 deg.C; SMD; SO8

EEPROM Memory; 2Mb; 256kbx8bit; 1MHz; I2C; 450ns; 12,5V-5.5V; -40+85 st.C; SMD; SOIC-8